通讯地址：福建省晋江市金井镇水城路1号 福大晋江科教园 教学实验楼B楼307 先进制造学院 Email：jameswsalebron@gmail.com

2007年09月 - 2012年08月，台湾东华大学，物理学专业，获学士学位2012年09月 - 2014年08月，台湾中兴大学，光电工程专业，获硕士学位2014年09月 - 2021年11月，台湾阳明交通大学，电子专业，获博士学位

无

主要从事于低温微纳设备开发，高密度先进器件，三维垂直集成芯片，器件良品率及可靠度优化等相关研究。研究领域、方向：方向1：微纳级低温工艺技术；方向2：非晶氧化物薄膜晶体管；方向3：非晶氧化物传感器；方向4：三维集成存储器；目前在国际知名期刊上已发表SCI论文27篇，授权1项国际专利，作为第一作者或主要作者发表的文献整理如下：https://www.researchgate.net/profile/Kai-Jhih-Ganhttps://scholar.google.com/citations?user=x1qintMAAAAJ&hl=en

福州大学科研启动费

1. “Oxidation State Modification in Gate Dielectric for Ge nMOSFET With Mixed Hydrogen and Ozone Plasma Pretreatments,” IEEE Transactions on Electron Devices, vol. 72, pp. 57-61, Jan. 2025.
2. “Simultaneously Improved Electrical Characteristics of Ge n/p-FinFETs and Inverter with Oxidized Alloy-Like Hafnium Nitride Interfacial Layer, ” IEEE Electron Device Letters, Dec. 2024，doi: 10.1109/LED.2024.3520711.
3. “Improved Electrical Characteristics of Ge FinFET CMOS by Plasma-Enhanced Oxidation and Partial Nitridation with Supercritical Fluid Treatment,” IEEE Electron Device Letters, vol. 45, pp. 2276-2279, Dec. 2024.
4. “Investigation of Deposition Technique and Thickness Effect of HfO₂ Film in Bilayer InWZnO-Based Conductive Bridge Random Access Memory,” Vacuum, vol. 201, p. 111123, Jul. 2022.
5. “Performance Improvement for Ge FinFET CMOS Inverter with Supercritical Fluid Treatment,” IEEE Electron Device Letters, vol. 43, pp. 838-841, Jun. 2022.
6. “Radiation Hardness of InWZnO Thin Film as Resistive Switching Layer,” Applied Physics Letters, vol. 120, p. 191605, May 2022.
7. “Improvement on Thermal Stability for Indium Gallium Zinc Oxide by Oxygen Vacancy Passivation with Supercritical Fluid Cosolvent Oxidation,” Applied Physics Letters, vol. 119, p. 231602, Dec. 2021.
8. “Adjusting Oxygen Vacancy and Resistance Switching of InWZnO Thin Films by High-Pressure Oxidation Technique,” Applied Physics Letters, vol. 119, p. 171601, Oct. 2021.
9. “Enhanced Electrical Characteristics of Ge nMOSFET by Supercritical Fluid CO₂ Treatment with H₂O₂ Cosolvent,” IEEE Electron Device Letters, vol. 42, pp. 645-648, Mar. 2021.
10. “Annealing Effects on Resistive Switching of IGZO-Based CBRAM Devices,” Vacuum, vol. 180, p. 109630, Oct. 2020.
11. “Investigation of Resistive Switching in Copper/InGaZnO/Al₂O₃-Based Memristor,” Applied Physics Letters, vol. 115, p. 143501, Sep. 2019.
12. Performance Enhancement for Tungsten-Doped Indium Oxide Thin Film Transistor by Hydrogen Peroxide as Cosolvent in Room-Temperature Supercritical Fluid Systems,” ACS Applied Materials & Interfaces, vol. 11, pp. 22521-22530, Jun. 2019.
13. “Bipolar Resistive Switching Characteristics of Tungsten-Doped Indium-Zinc Oxide Conductive-Bridging Random Access Memory,” Vacuum, vol. 166, pp. 226-230, May 2019.
14. “Photoresponsivity Enhancement and Extension of the Detection Spectrum for Amorphous Oxide Semiconductor Based Sensors,” Advanced Electronic Materials, vol. 5, p.1800824, Mar. 2019.
15. “TAOS Based Cu/TiW/IGZO/Ga₂O₃/Pt Bilayer CBRAM for Low-Power Display Technology,” Surface and Coatings Technology, vol. 354, pp. 169-174, Nov. 2018.

无

现正招收新入学的硕士研究生，欢迎有志于微电子工艺领域发展的同学加入本人，阮敦宝教授以及赵泽夫博士所组成的团队。研究生招生信息：新一代电子信息技术（专硕）/集成电路工程（专硕）